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| HERF1001G - HERF1008G Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers ITO-220AB Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. Mechanical Data Case: ITO-220AB molded plastic Epoxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C/ 0.25" (6.35mm) from case for 10 seconds. Mounting torque: 5 in - 1bs. max. Weight: 2.24 grams Dimensions in inches and (millimeters) Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Maximum Ratings and Electrical Characteristics Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @T C = 100 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 5.0A Maximum DC Reverse Current @T A=25 oC at Rated DC Blocking Voltage @ T A=125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Operating Temperature Range Symbol HERF HERF HERF HERF HERF HERF HERF HERF Units 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G V RRM V RMS V DC I(AV) IFSM VF IR Trr 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 10 600 420 600 800 1000 560 700 800 1000 V V V A A 125 1.0 1.3 10 400 50 60 3.0 -65 to +150 -65 to +150 80 40 1.7 V uA uA nS pF o C/W o C o C Cj R JC TJ Storage Temperature Range T STG 1. Reverse Recovery Test Conditions: IF=0.5A, IR =1.0A, IRR =0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. Version: A06 RATINGS AND CHARACTERISTIC CURVES (HERF1001G THRU HERF1008G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 10 8 6 4 2 0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT. ( A) 100 Tj=125 0C Tj=75 0C 10 0 50 100 o 150 LEAD TEMPERATURE. ( C) Tj=25 0C PEAK FORWARD SURGE CURRENT. (A) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 125 100 75 50 25 8.3ms Single Half Sine Wave JEDEC Method 1 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 HE RF 10 01 G ~H ER F1 00 4G H F ER 10 1 2 5 10 20 50 100 INSTANTANEOUS FORWARD CURRENT. (A) 30 10 NUMBER OF CYCLES AT 60Hz 05 G 3 1 FIG.4- TYPICAL JUNCTION CAPACITANCE 240 200 8G 00 F1 ER ~H 6G 00 F1 R HE CAPACITANCE.(pF) 0.3 0.1 160 120 80 40 0 1 2 5 HER F10 06G HE RF 100 1G ~H ER F10 05G 0.03 0.01 0.4 ~HE Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0 RF1 008 G 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 20 50 100 200 500 1000 FORWARD VOLTAGE. (V) REVERSE VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06 |
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